200902092-3 adva nced power electronics corp. 1/6 ap9576gh/j-hf-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com p-channel enhancement-mode power mosfet dss ds(on) d description absolute maximum ratings symbol units v ds v v gs i d a i d a i dm d at t a =25c w/c t stg t j symbol value unit parameter rating gate-source voltage continuous drain current 3 continuous drain current 3 pulsed drain current 1 -55 to 150 c operating junction temperature range -55 to 150 c thermal data parameter storage temperature range bv -60v fast switching characteristic r 100mw lower on-resistance simple drive requirement rohs-compliant, halogen-free i -1 4 a drain-source voltage -60 2 0 v at t =2 5 c - 1 4 a at t = 10 0 c - 9 a - 45 a linear derating factor 0. 2 9 rthj- c maximum thermal resistance, junction-case rthj- a maximum thermal resistance, junction-ambient (pcb mount) 3 62.5 c /w 3.4 c /w o rdering information ap957 6 gh-hf-3 tr : in rohs-compliant halogen-free to-252 , shipped on tape and reel ( 3000 pcs/reel) ap957 6 gj-hf-3tb : in rohs-compliant halogen-free to-251 , shipped in tubes (80pcs/tube) a dvanced power mosfets from apec provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. the ap957 6 gh-hf-3 is in the to-2 52 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as dc/dc converters. the ap957 6 gj-hf-3 is in the to-2 51 through-hole package which is used where a small pcb footprint or an attached heatsink is required. p total power dissipation 36.8 w rthj- a maximum thermal resistance, junction-ambient 110 c /w g d s g d s to-252 (h) d (tab) g d s to-251 (j) d (tab)
adva nced power electronics corp. 2/6 ap9576gh/j-hf-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com electrical specifications at t j =25c (unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -60 - - v d bv dss /d t j breakdown voltage temperature coefficient reference to 25c, i d =-1ma - - 0.06 - v/c r ds(on) static drain-source on-resistance 2 v gs = -10v, i d =-10a - - 100 mw v gs = -4.5v, i d =-8a - - 120 mw v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -0.8 - -3 v g fs forward transconductance v ds =-10v, i d =-5a - 6 - s i dss drain-source leakage current v ds =-60v, v gs =0v - - -10 ua drain-source leakage current (t j =125 o c) v ds =-48v, v gs =0v - - -250 ua i gss gate-source leakage v gs =20v, v ds =0v - - 100 na q g total gate charge 2 i d =--10a - 14 22 nc q gs gate-source charge v ds =-48v - 3 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 6 - nc t d(on) turn-on delay time 2 v ds =-30v - 8 - ns t r rise time i d =-10a - 18 - ns t d(off) turn-off delay time r g =3.3w , v gs =-10v - 32 - ns t f fall time r d = 3w - 56 - ns c iss input capacitance v gs =0v - 1170 1880 pf c oss output capacitance v ds =-25v - 120 - pf c rss reverse transfer capacitance f=1.0mhz - 90 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s = -10a, v gs =0v - - -1.2 v t rr reverse recovery time 2 i s =-10a, v gs =0 v - 39 - ns q rr reverse recovery charge di/dt=-100a/s - 59 - nc notes: 1.pulse width limited by safe operating area 2.pulse test - pulse width < 300s, duty cycle < 2% this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 3.surface mounted on 1 in copper pad of fr4 board
adva nced power electronics corp. 3/6 ap9576gh/j-hf-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance vs. gate voltage fig 4. normalized on-resistance vs. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage vs. reverse diode junction temperature typical electrical characteristics 0.0 0.5 1.0 1.5 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v) 0 10 20 30 024681 01 2 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c -10v -7.0v -5.0v -4.5v v g = -3.0 v 0 10 20 30 024681 01 2 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c = 150 o c -10v -7.0v -5.0v -4.5v v g = -3.0 v 80 85 90 95 100 24681 0 -v gs , gate-to-source voltage (v) r ds(on) (mw ) i d =-8a t c =25 o c 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = - 10 a v g = - 10v 0 1 2 3 4 0 0.2 0.4 0.6 0.8 1 1.2 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c
adva nced power electronics corp. 4/6 ap9576gh/j-hf-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveforms fig 12. gate charge waveform typical electrical characteristics (cont.) t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -4.5v q gs q gd q g charge 0 2 4 6 8 10 12 0 5 10 15 20 25 30 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -10a v ds = -48v 10 100 1000 10000 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 1000 -v ds , drain-to-source voltage (v) -i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse
adva nced power electronics corp. 5/6 ap9576gh/j-hf-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com package dimensions: to-252 millimeters min nom max a2 1.80 2.30 2.80 a3 0.40 0.50 0.60 b1 0.40 0.70 1.00 d 6.00 6.50 7.00 d1 4.80 5.35 5.90 e3 3.50 4.00 4.50 f 2.20 2.63 3.05 f1 0.50 0.85 1.20 e1 5.10 5.70 6.30 e2 0.50 1.10 1.80 e -- 2.30 -- c 0.35 0.50 0.65 1. all dimensions are in millimeters. 2. dimensions do not include mold protrusions. marking information laser marking symbols e e d d1 e2 e1 f b1 f1 a2 a3 c r : 0.127~0.381 ( 0.1mm product: ap9576 gh = rohs-compliant halogen-free to-252 9576gh ywwsss date/lot code (ywwsss) y: last digit of the year ww: work week sss: lot code sequence e3 package code
adva nced power electronics corp. 6/6 ap9576gh/j-hf-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com package dimensions: to-251 min nom max a 2.20 2.30 2.40 a1 0.90 1.20 1.50 b1 0.40 0.60 0.80 b2 0.60 0.85 1.05 c 0.40 0.50 0.60 c1 0.40 0.50 0.60 d 6.40 6.60 6.80 d1 4.80 5.20 5.50 e 6.70 7.00 7.30 e1 5.40 5.60 5.80 e2 1.30 1.50 1.70 e ---- 2.30 ---- f 7.00 8.30 9.60 1. all dimensions are in millimeters. 2. dimensions do not include mold protrusions. marking information symbols millimeters 9576gj ywwsss product: ap9576 package code a c1 a1 c e d e2 e1 e b1 b2 f d1 e date code (ywwsss) y: last digit of the year ww: work week sss: lot code sequence gj = rohs-compliant halogen-free to-251
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